Photoluminescence response of ion-implanted silicon
نویسندگان
چکیده
منابع مشابه
Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2006
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2378402